Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that...

Descripción completa

Detalles Bibliográficos
Autores principales: Gao, Na, Huang, Kai, Li, Jinchai, Li, Shuping, Yang, Xu, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3495303/
https://www.ncbi.nlm.nih.gov/pubmed/23150780
http://dx.doi.org/10.1038/srep00816

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3495303/
https://www.ncbi.nlm.nih.gov/pubmed/23150780
http://dx.doi.org/10.1038/srep00816

Ejemplares similares