Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that...

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Detalles Bibliográficos
Autores principales: Gao, Na, Huang, Kai, Li, Jinchai, Li, Shuping, Yang, Xu, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3495303/
https://www.ncbi.nlm.nih.gov/pubmed/23150780
http://dx.doi.org/10.1038/srep00816
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author Gao, Na
Huang, Kai
Li, Jinchai
Li, Shuping
Yang, Xu
Kang, Junyong
author_facet Gao, Na
Huang, Kai
Li, Jinchai
Li, Shuping
Yang, Xu
Kang, Junyong
author_sort Gao, Na
collection PubMed
description We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emission enhancement of deep-UV LEDs is attributed to the higher LEE by the surface plasmon-transverse magnetic wave coupling. When the proportion of the TM wave to the Al layer increases with the Al content in the Al(x)Ga(1-x)N multiple quantum wells, i.e., the band edge emission energy, the enhancement ratio of the Al-coated deep-UV LEDs increases.
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spelling pubmed-34953032012-11-13 Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells Gao, Na Huang, Kai Li, Jinchai Li, Shuping Yang, Xu Kang, Junyong Sci Rep Article We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emission enhancement of deep-UV LEDs is attributed to the higher LEE by the surface plasmon-transverse magnetic wave coupling. When the proportion of the TM wave to the Al layer increases with the Al content in the Al(x)Ga(1-x)N multiple quantum wells, i.e., the band edge emission energy, the enhancement ratio of the Al-coated deep-UV LEDs increases. Nature Publishing Group 2012-11-12 /pmc/articles/PMC3495303/ /pubmed/23150780 http://dx.doi.org/10.1038/srep00816 Text en Copyright © 2012, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-sa/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareALike 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/3.0/
spellingShingle Article
Gao, Na
Huang, Kai
Li, Jinchai
Li, Shuping
Yang, Xu
Kang, Junyong
Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
title Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
title_full Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
title_fullStr Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
title_full_unstemmed Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
title_short Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
title_sort surface-plasmon-enhanced deep-uv light emitting diodes based on algan multi-quantum wells
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3495303/
https://www.ncbi.nlm.nih.gov/pubmed/23150780
http://dx.doi.org/10.1038/srep00816
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