Cargando…
X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC
Fluorescence-yield X-ray absorption fine structure (FY-XAFS) is extensively used for investigating atomic-scale local structures around specific elements in functional materials. However, conventional FY-XAFS instruments frequently cannot cover trace light elements, for example dopants in wide gap s...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2012
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3496949/ https://www.ncbi.nlm.nih.gov/pubmed/23152937 http://dx.doi.org/10.1038/srep00831 |
_version_ | 1782249691652554752 |
---|---|
author | Ohkubo, M. Shiki, S. Ukibe, M. Matsubayashi, N. Kitajima, Y. Nagamachi, S. |
author_facet | Ohkubo, M. Shiki, S. Ukibe, M. Matsubayashi, N. Kitajima, Y. Nagamachi, S. |
author_sort | Ohkubo, M. |
collection | PubMed |
description | Fluorescence-yield X-ray absorption fine structure (FY-XAFS) is extensively used for investigating atomic-scale local structures around specific elements in functional materials. However, conventional FY-XAFS instruments frequently cannot cover trace light elements, for example dopants in wide gap semiconductors, because of insufficient energy resolution of semiconductor X-ray detectors. Here we introduce a superconducting XAFS (SC-XAFS) apparatus to measure X-ray absorption near-edge structure (XANES) of n-type dopant N atoms (4 ×10(19) cm(−3)) implanted at 500°C into 4H-SiC substrates annealed subsequently. The XANES spectra and ab initio multiple scattering calculations indicate that the N atoms almost completely substitute for the C sites, associated with a possible existence of local CN regions, in the as-implanted state. This is a reason why hot implantation is necessary for dopant activation in ion implantation. The SC-XAFS apparatus may play an important role in improving doping processes for energy-saving wide-gap semiconductors and other functional materials. |
format | Online Article Text |
id | pubmed-3496949 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-34969492012-11-14 X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC Ohkubo, M. Shiki, S. Ukibe, M. Matsubayashi, N. Kitajima, Y. Nagamachi, S. Sci Rep Article Fluorescence-yield X-ray absorption fine structure (FY-XAFS) is extensively used for investigating atomic-scale local structures around specific elements in functional materials. However, conventional FY-XAFS instruments frequently cannot cover trace light elements, for example dopants in wide gap semiconductors, because of insufficient energy resolution of semiconductor X-ray detectors. Here we introduce a superconducting XAFS (SC-XAFS) apparatus to measure X-ray absorption near-edge structure (XANES) of n-type dopant N atoms (4 ×10(19) cm(−3)) implanted at 500°C into 4H-SiC substrates annealed subsequently. The XANES spectra and ab initio multiple scattering calculations indicate that the N atoms almost completely substitute for the C sites, associated with a possible existence of local CN regions, in the as-implanted state. This is a reason why hot implantation is necessary for dopant activation in ion implantation. The SC-XAFS apparatus may play an important role in improving doping processes for energy-saving wide-gap semiconductors and other functional materials. Nature Publishing Group 2012-11-14 /pmc/articles/PMC3496949/ /pubmed/23152937 http://dx.doi.org/10.1038/srep00831 Text en Copyright © 2012, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-sa/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareALike 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/3.0/ |
spellingShingle | Article Ohkubo, M. Shiki, S. Ukibe, M. Matsubayashi, N. Kitajima, Y. Nagamachi, S. X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC |
title | X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC |
title_full | X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC |
title_fullStr | X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC |
title_full_unstemmed | X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC |
title_short | X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC |
title_sort | x-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in sic |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3496949/ https://www.ncbi.nlm.nih.gov/pubmed/23152937 http://dx.doi.org/10.1038/srep00831 |
work_keys_str_mv | AT ohkubom xrayabsorptionnearedgespectroscopywithasuperconductingdetectorfornitrogendopantsinsic AT shikis xrayabsorptionnearedgespectroscopywithasuperconductingdetectorfornitrogendopantsinsic AT ukibem xrayabsorptionnearedgespectroscopywithasuperconductingdetectorfornitrogendopantsinsic AT matsubayashin xrayabsorptionnearedgespectroscopywithasuperconductingdetectorfornitrogendopantsinsic AT kitajimay xrayabsorptionnearedgespectroscopywithasuperconductingdetectorfornitrogendopantsinsic AT nagamachis xrayabsorptionnearedgespectroscopywithasuperconductingdetectorfornitrogendopantsinsic |