Tunable and sizable band gap in silicene by surface adsorption

Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption o...

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Detalles Bibliográficos
Autores principales: Quhe, Ruge, Fei, Ruixiang, Liu, Qihang, Zheng, Jiaxin, Li, Hong, Xu, Chengyong, Ni, Zeyuan, Wang, Yangyang, Yu, Dapeng, Gao, Zhengxiang, Lu, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3497012/
https://www.ncbi.nlm.nih.gov/pubmed/23152944
http://dx.doi.org/10.1038/srep00853

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3497012/
https://www.ncbi.nlm.nih.gov/pubmed/23152944
http://dx.doi.org/10.1038/srep00853

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