Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor...

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Detalles Bibliográficos
Autores principales: Ben Slama, Sonia, Hajji, Messaoud, Ezzaouia, Hatem
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3497612/
https://www.ncbi.nlm.nih.gov/pubmed/22901341
http://dx.doi.org/10.1186/1556-276X-7-464

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3497612/
https://www.ncbi.nlm.nih.gov/pubmed/22901341
http://dx.doi.org/10.1186/1556-276X-7-464

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