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Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)
Ge/Si quantum dots fabricated by molecular-beam epitaxy at 500°C are overgrown with Si at different temperatures T(cap), and effect of boron delta doping of Si barriers on the mid-infrared photoresponse was investigated. The photocurrent maximum shifts from 2.3 to 3.9 μm with increasing T(cap)from 3...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3499146/ https://www.ncbi.nlm.nih.gov/pubmed/22938028 http://dx.doi.org/10.1186/1556-276X-7-494 |