Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external i...

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Detalles Bibliográficos
Autores principales: Duque, Carlos M, Mora-Ramos, Miguel E, Duque, Carlos A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3499168/
https://www.ncbi.nlm.nih.gov/pubmed/22937963
http://dx.doi.org/10.1186/1556-276X-7-492

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3499168/
https://www.ncbi.nlm.nih.gov/pubmed/22937963
http://dx.doi.org/10.1186/1556-276X-7-492

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