Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external i...

Descripción completa

Detalles Bibliográficos
Autores principales: Duque, Carlos M, Mora-Ramos, Miguel E, Duque, Carlos A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3499168/
https://www.ncbi.nlm.nih.gov/pubmed/22937963
http://dx.doi.org/10.1186/1556-276X-7-492
Descripción
Sumario:In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.

Ejemplares similares