Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external i...

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Detalles Bibliográficos
Autores principales: Duque, Carlos M, Mora-Ramos, Miguel E, Duque, Carlos A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3499168/
https://www.ncbi.nlm.nih.gov/pubmed/22937963
http://dx.doi.org/10.1186/1556-276X-7-492
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author Duque, Carlos M
Mora-Ramos, Miguel E
Duque, Carlos A
author_facet Duque, Carlos M
Mora-Ramos, Miguel E
Duque, Carlos A
author_sort Duque, Carlos M
collection PubMed
description In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.
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spelling pubmed-34991682012-11-19 Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields Duque, Carlos M Mora-Ramos, Miguel E Duque, Carlos A Nanoscale Res Lett Nano Express In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail. Springer 2012-08-31 /pmc/articles/PMC3499168/ /pubmed/22937963 http://dx.doi.org/10.1186/1556-276X-7-492 Text en Copyright ©2012 Duque et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Duque, Carlos M
Mora-Ramos, Miguel E
Duque, Carlos A
Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title_full Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title_fullStr Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title_full_unstemmed Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title_short Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
title_sort exciton properties in zincblende ingan-gan quantum wells under the effects of intense laser fields
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3499168/
https://www.ncbi.nlm.nih.gov/pubmed/22937963
http://dx.doi.org/10.1186/1556-276X-7-492
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AT duquecarlosa excitonpropertiesinzincblendeinganganquantumwellsundertheeffectsofintenselaserfields

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