Spin injection in n-type resonant tunneling diodes

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X(−))...

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Detalles Bibliográficos
Autores principales: Orsi Gordo, Vanessa, Herval, Leonilson KS, Galeti, Helder VA, Gobato, Yara Galvão, Brasil, Maria JSP, Marques, Gilmar E, Henini, Mohamed, Airey, Robert J
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3506468/
https://www.ncbi.nlm.nih.gov/pubmed/23098559
http://dx.doi.org/10.1186/1556-276X-7-592

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3506468/
https://www.ncbi.nlm.nih.gov/pubmed/23098559
http://dx.doi.org/10.1186/1556-276X-7-592

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