Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy

In this paper, the formation of Ga droplets on photo-lithographically patterned GaAs (100) and the control of the size and density of Ga droplets by droplet epitaxy using molecular beam epitaxy are demonstrated. In extension of our previous result from the journal Physical Status Solidi A, volume 20...

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Detalles Bibliográficos
Autores principales: Li, Ming-Yu, Hirono, Yusuke, Koukourinkova, Sabina D, Sui, Mao, Song, Sangmin, Kim, Eun-Soo, Lee, Jihoon, Salamo, Gregory J
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3506476/
https://www.ncbi.nlm.nih.gov/pubmed/23033893
http://dx.doi.org/10.1186/1556-276X-7-550

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3506476/
https://www.ncbi.nlm.nih.gov/pubmed/23033893
http://dx.doi.org/10.1186/1556-276X-7-550

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