The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La(0.7)Sr(0.3)MnO(3) (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive...

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Detalles Bibliográficos
Autores principales: Moreno, César, Munuera, Carmen, Obradors, Xavier, Ocal, Carmen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2012
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3512122/
https://www.ncbi.nlm.nih.gov/pubmed/23213636
http://dx.doi.org/10.3762/bjnano.3.82

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3512122/
https://www.ncbi.nlm.nih.gov/pubmed/23213636
http://dx.doi.org/10.3762/bjnano.3.82

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