Effects of an intense, high-frequency laser field on bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well

Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga(x)In(1 − x)N(y)As(1 − y)/GaAs double quantum well for different nitrogen and indium mole concentrations. The...

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Detalles Bibliográficos
Autores principales: Ungan, Fatih, Yesilgul, Unal, Şakiroğlu, Serpil, Kasapoglu, Esin, Erol, Ayse, Arikan, Mehmet Cetin, Sarı, Huseyin, Sökmen, Ismail
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3512540/
https://www.ncbi.nlm.nih.gov/pubmed/23113959
http://dx.doi.org/10.1186/1556-276X-7-606

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3512540/
https://www.ncbi.nlm.nih.gov/pubmed/23113959
http://dx.doi.org/10.1186/1556-276X-7-606

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