Effects of an intense, high-frequency laser field on bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well

Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga(x)In(1 − x)N(y)As(1 − y)/GaAs double quantum well for different nitrogen and indium mole concentrations. The...

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Autores principales: Ungan, Fatih, Yesilgul, Unal, Şakiroğlu, Serpil, Kasapoglu, Esin, Erol, Ayse, Arikan, Mehmet Cetin, Sarı, Huseyin, Sökmen, Ismail
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3512540/
https://www.ncbi.nlm.nih.gov/pubmed/23113959
http://dx.doi.org/10.1186/1556-276X-7-606
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author Ungan, Fatih
Yesilgul, Unal
Şakiroğlu, Serpil
Kasapoglu, Esin
Erol, Ayse
Arikan, Mehmet Cetin
Sarı, Huseyin
Sökmen, Ismail
author_facet Ungan, Fatih
Yesilgul, Unal
Şakiroğlu, Serpil
Kasapoglu, Esin
Erol, Ayse
Arikan, Mehmet Cetin
Sarı, Huseyin
Sökmen, Ismail
author_sort Ungan, Fatih
collection PubMed
description Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga(x)In(1 − x)N(y)As(1 − y)/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.
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spelling pubmed-35125402012-12-04 Effects of an intense, high-frequency laser field on bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well Ungan, Fatih Yesilgul, Unal Şakiroğlu, Serpil Kasapoglu, Esin Erol, Ayse Arikan, Mehmet Cetin Sarı, Huseyin Sökmen, Ismail Nanoscale Res Lett Nano Review Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga(x)In(1 − x)N(y)As(1 − y)/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization. Springer 2012-10-31 /pmc/articles/PMC3512540/ /pubmed/23113959 http://dx.doi.org/10.1186/1556-276X-7-606 Text en Copyright ©2012 Ungan et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Review
Ungan, Fatih
Yesilgul, Unal
Şakiroğlu, Serpil
Kasapoglu, Esin
Erol, Ayse
Arikan, Mehmet Cetin
Sarı, Huseyin
Sökmen, Ismail
Effects of an intense, high-frequency laser field on bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well
title Effects of an intense, high-frequency laser field on bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well
title_full Effects of an intense, high-frequency laser field on bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well
title_fullStr Effects of an intense, high-frequency laser field on bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well
title_full_unstemmed Effects of an intense, high-frequency laser field on bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well
title_short Effects of an intense, high-frequency laser field on bound states in Ga(1 − x)In(x)N(y)As(1 − y)/GaAs double quantum well
title_sort effects of an intense, high-frequency laser field on bound states in ga(1 − x)in(x)n(y)as(1 − y)/gaas double quantum well
topic Nano Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3512540/
https://www.ncbi.nlm.nih.gov/pubmed/23113959
http://dx.doi.org/10.1186/1556-276X-7-606
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