Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga(0.35)In(0.65) N(0.02)As(0.08)/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distr...

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Detalles Bibliográficos
Autores principales: Chaqmaqchee, Faten Adel Ismael, Balkan, Naci
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3519763/
https://www.ncbi.nlm.nih.gov/pubmed/23009105
http://dx.doi.org/10.1186/1556-276X-7-526

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3519763/
https://www.ncbi.nlm.nih.gov/pubmed/23009105
http://dx.doi.org/10.1186/1556-276X-7-526

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