Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces

In this paper, we study the electrochemical anodization of n-type heavily doped 4 H-SiC wafers in a HF-based electrolyte without any UV light assistance. We present, in particular, the differences observed between the etching of Si and C faces. In the case of the Si face, the resulting material is m...

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Detalles Bibliográficos
Autores principales: Gautier, Gael, Cayrel, Frederic, Capelle, Marie, Billoué, Jérome, Song, Xi, Michaud, Jean-Francois
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3519798/
https://www.ncbi.nlm.nih.gov/pubmed/22892360
http://dx.doi.org/10.1186/1556-276X-7-367

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3519798/
https://www.ncbi.nlm.nih.gov/pubmed/22892360
http://dx.doi.org/10.1186/1556-276X-7-367

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