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Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces
In this paper, we study the electrochemical anodization of n-type heavily doped 4 H-SiC wafers in a HF-based electrolyte without any UV light assistance. We present, in particular, the differences observed between the etching of Si and C faces. In the case of the Si face, the resulting material is m...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3519798/ https://www.ncbi.nlm.nih.gov/pubmed/22892360 http://dx.doi.org/10.1186/1556-276X-7-367 |