Dilute nitride and GaAs n-i-p-i solar cells

We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg...

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Detalles Bibliográficos
Autores principales: Mazzucato, Simone, Royall, Benjamin, Ketlhwaafetse, Richard, Balkan, Naci, Salmi, Joel, Puustinen, Janne, Guina, Mircea, Smith, Andy, Gwilliam, Russell
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3523972/
https://www.ncbi.nlm.nih.gov/pubmed/23167964
http://dx.doi.org/10.1186/1556-276X-7-631

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3523972/
https://www.ncbi.nlm.nih.gov/pubmed/23167964
http://dx.doi.org/10.1186/1556-276X-7-631

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