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Dilute nitride and GaAs n-i-p-i solar cells
We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3523972/ https://www.ncbi.nlm.nih.gov/pubmed/23167964 http://dx.doi.org/10.1186/1556-276X-7-631 |