Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

A sample of the β-Ga(2)O(3)/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga(2)O(3) layer was formed epitaxially on GaN. The valence band offset of the β-Ga(2)O(3)/wurtzite GaN heterostructure is me...

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Detalles Bibliográficos
Autores principales: Wei, Wei, Qin, Zhixin, Fan, Shunfei, Li, Zhiwei, Shi, Kai, Zhu, Qinsheng, Zhang, Guoyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526396/
https://www.ncbi.nlm.nih.gov/pubmed/23046910
http://dx.doi.org/10.1186/1556-276X-7-562

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526396/
https://www.ncbi.nlm.nih.gov/pubmed/23046910
http://dx.doi.org/10.1186/1556-276X-7-562

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