Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

A sample of the β-Ga(2)O(3)/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga(2)O(3) layer was formed epitaxially on GaN. The valence band offset of the β-Ga(2)O(3)/wurtzite GaN heterostructure is me...

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Detalles Bibliográficos
Autores principales: Wei, Wei, Qin, Zhixin, Fan, Shunfei, Li, Zhiwei, Shi, Kai, Zhu, Qinsheng, Zhang, Guoyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526396/
https://www.ncbi.nlm.nih.gov/pubmed/23046910
http://dx.doi.org/10.1186/1556-276X-7-562
_version_ 1782253550893531136
author Wei, Wei
Qin, Zhixin
Fan, Shunfei
Li, Zhiwei
Shi, Kai
Zhu, Qinsheng
Zhang, Guoyi
author_facet Wei, Wei
Qin, Zhixin
Fan, Shunfei
Li, Zhiwei
Shi, Kai
Zhu, Qinsheng
Zhang, Guoyi
author_sort Wei, Wei
collection PubMed
description A sample of the β-Ga(2)O(3)/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga(2)O(3) layer was formed epitaxially on GaN. The valence band offset of the β-Ga(2)O(3)/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga(2)O(3)/GaN structure is 1.40 ± 0.08 eV.
format Online
Article
Text
id pubmed-3526396
institution National Center for Biotechnology Information
language English
publishDate 2012
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-35263962012-12-21 Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy Wei, Wei Qin, Zhixin Fan, Shunfei Li, Zhiwei Shi, Kai Zhu, Qinsheng Zhang, Guoyi Nanoscale Res Lett Nano Express A sample of the β-Ga(2)O(3)/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga(2)O(3) layer was formed epitaxially on GaN. The valence band offset of the β-Ga(2)O(3)/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga(2)O(3)/GaN structure is 1.40 ± 0.08 eV. Springer 2012-10-10 /pmc/articles/PMC3526396/ /pubmed/23046910 http://dx.doi.org/10.1186/1556-276X-7-562 Text en Copyright ©2012 Wei et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Wei, Wei
Qin, Zhixin
Fan, Shunfei
Li, Zhiwei
Shi, Kai
Zhu, Qinsheng
Zhang, Guoyi
Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
title Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
title_full Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
title_fullStr Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
title_full_unstemmed Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
title_short Valence band offset of β-Ga(2)O(3)/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
title_sort valence band offset of β-ga(2)o(3)/wurtzite gan heterostructure measured by x-ray photoelectron spectroscopy
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526396/
https://www.ncbi.nlm.nih.gov/pubmed/23046910
http://dx.doi.org/10.1186/1556-276X-7-562
work_keys_str_mv AT weiwei valencebandoffsetofbga2o3wurtziteganheterostructuremeasuredbyxrayphotoelectronspectroscopy
AT qinzhixin valencebandoffsetofbga2o3wurtziteganheterostructuremeasuredbyxrayphotoelectronspectroscopy
AT fanshunfei valencebandoffsetofbga2o3wurtziteganheterostructuremeasuredbyxrayphotoelectronspectroscopy
AT lizhiwei valencebandoffsetofbga2o3wurtziteganheterostructuremeasuredbyxrayphotoelectronspectroscopy
AT shikai valencebandoffsetofbga2o3wurtziteganheterostructuremeasuredbyxrayphotoelectronspectroscopy
AT zhuqinsheng valencebandoffsetofbga2o3wurtziteganheterostructuremeasuredbyxrayphotoelectronspectroscopy
AT zhangguoyi valencebandoffsetofbga2o3wurtziteganheterostructuremeasuredbyxrayphotoelectronspectroscopy

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