Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition

High Al content Al(x)Ga(1−x)N/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These MQWs were designed to achieve intersubband (ISB) absorption in the mid-infrared spectral range. We have considered two growth conditions, with A...

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Detalles Bibliográficos
Autores principales: Sun, He Hui, Guo, Feng Yun, Li, Deng Yue, Wang, Lu, Wang, Dong Bo, Zhao, Lian Cheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526456/
https://www.ncbi.nlm.nih.gov/pubmed/23181766
http://dx.doi.org/10.1186/1556-276X-7-649

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526456/
https://www.ncbi.nlm.nih.gov/pubmed/23181766
http://dx.doi.org/10.1186/1556-276X-7-649

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