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Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition

High Al content Al(x)Ga(1−x)N/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These MQWs were designed to achieve intersubband (ISB) absorption in the mid-infrared spectral range. We have considered two growth conditions, with A...

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Autores principales: Sun, He Hui, Guo, Feng Yun, Li, Deng Yue, Wang, Lu, Wang, Dong Bo, Zhao, Lian Cheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526456/
https://www.ncbi.nlm.nih.gov/pubmed/23181766
http://dx.doi.org/10.1186/1556-276X-7-649
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author Sun, He Hui
Guo, Feng Yun
Li, Deng Yue
Wang, Lu
Wang, Dong Bo
Zhao, Lian Cheng
author_facet Sun, He Hui
Guo, Feng Yun
Li, Deng Yue
Wang, Lu
Wang, Dong Bo
Zhao, Lian Cheng
author_sort Sun, He Hui
collection PubMed
description High Al content Al(x)Ga(1−x)N/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These MQWs were designed to achieve intersubband (ISB) absorption in the mid-infrared spectral range. We have considered two growth conditions, with AlGaN interlayer and GaN/AlN superlattice (SL) interlayer, both deposited on GaN-on-sapphire templates. Atomic force microscopy images show a relatively rough surface with atomic-step terraces and surface depression, mainly dominated by dislocations. High-resolution X-ray diffraction and transmission electron microscopy analyses indicate that good crystalline quality of the AlGaN/GaN MQW layer could be achieved when the AlGaN interlayer is inserted. The ISB absorption with a peak at 3.7 μm was demonstrated in MQW films with AlGaN interlayer. However, we have not observed the infrared absorption in MQW films with GaN/AlN SL interlayer. It is believed that the high dislocation density and weaker polarization that resulted from the rough interface are determinant factors of vanished ISB absorption for MQW films with the GaN/AlN SL interlayer.
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spelling pubmed-35264562012-12-21 Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition Sun, He Hui Guo, Feng Yun Li, Deng Yue Wang, Lu Wang, Dong Bo Zhao, Lian Cheng Nanoscale Res Lett Nano Express High Al content Al(x)Ga(1−x)N/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These MQWs were designed to achieve intersubband (ISB) absorption in the mid-infrared spectral range. We have considered two growth conditions, with AlGaN interlayer and GaN/AlN superlattice (SL) interlayer, both deposited on GaN-on-sapphire templates. Atomic force microscopy images show a relatively rough surface with atomic-step terraces and surface depression, mainly dominated by dislocations. High-resolution X-ray diffraction and transmission electron microscopy analyses indicate that good crystalline quality of the AlGaN/GaN MQW layer could be achieved when the AlGaN interlayer is inserted. The ISB absorption with a peak at 3.7 μm was demonstrated in MQW films with AlGaN interlayer. However, we have not observed the infrared absorption in MQW films with GaN/AlN SL interlayer. It is believed that the high dislocation density and weaker polarization that resulted from the rough interface are determinant factors of vanished ISB absorption for MQW films with the GaN/AlN SL interlayer. Springer 2012-11-26 /pmc/articles/PMC3526456/ /pubmed/23181766 http://dx.doi.org/10.1186/1556-276X-7-649 Text en Copyright ©2012 Sun et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Sun, He Hui
Guo, Feng Yun
Li, Deng Yue
Wang, Lu
Wang, Dong Bo
Zhao, Lian Cheng
Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
title Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
title_full Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
title_fullStr Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
title_full_unstemmed Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
title_short Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
title_sort intersubband absorption properties of high al content al(x)ga(1−x)n/gan multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526456/
https://www.ncbi.nlm.nih.gov/pubmed/23181766
http://dx.doi.org/10.1186/1556-276X-7-649
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