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Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO(2) walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The...

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Detalles Bibliográficos
Autores principales: Hsu, Chao-Wei, Chen, Yung-Feng, Su, Yan-Kuin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3533999/
https://www.ncbi.nlm.nih.gov/pubmed/23176442
http://dx.doi.org/10.1186/1556-276X-7-642