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Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy
InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO(2) walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3533999/ https://www.ncbi.nlm.nih.gov/pubmed/23176442 http://dx.doi.org/10.1186/1556-276X-7-642 |