Electron transport in a GaPSb film

We have performed transport measurements on a gallium phosphide antimonide (GaPSb) film grown on GaAs. At low temperatures (T), transport is governed by three-dimensional Mott variable range hopping (VRH) due to strong localization. Therefore, electron–electron interactions are not significant in Ga...

Descripción completa

Detalles Bibliográficos
Autores principales: Lo, Shun-Tsung, Lin, Hung En, Wang, Shu-Wei, Lin, Huang-De, Chin, Yu-Chung, Lin, Hao-Hsiung, Lin, Jheng-Cyuan, Liang, Chi-Te
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552782/
https://www.ncbi.nlm.nih.gov/pubmed/23173952
http://dx.doi.org/10.1186/1556-276X-7-640

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552782/
https://www.ncbi.nlm.nih.gov/pubmed/23173952
http://dx.doi.org/10.1186/1556-276X-7-640

Ejemplares similares