Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure

We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to th...

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Detalles Bibliográficos
Autores principales: Huh, Chul, Kim, Bong Kyu, Park, Byoung-Jun, Jang, Eun-Hye, Kim, Sang-Hyeob
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552791/
https://www.ncbi.nlm.nih.gov/pubmed/23289520
http://dx.doi.org/10.1186/1556-276X-8-14

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552791/
https://www.ncbi.nlm.nih.gov/pubmed/23289520
http://dx.doi.org/10.1186/1556-276X-8-14

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