Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance

We have theoretically investigated the effects of random discrete distribution of implanted and annealed arsenic (As) atoms on device characteristics of silicon nanowire (Si NW) transistors. Kinetic Monte Carlo simulation is used for generating realistic random distribution of active As atoms in Si...

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Detalles Bibliográficos
Autores principales: Uematsu, Masashi, Itoh, Kohei M, Mil'nikov, Gennady, Minari, Hideki, Mori, Nobuya
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552816/
https://www.ncbi.nlm.nih.gov/pubmed/23259464
http://dx.doi.org/10.1186/1556-276X-7-685

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552816/
https://www.ncbi.nlm.nih.gov/pubmed/23259464
http://dx.doi.org/10.1186/1556-276X-7-685

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