Cargando…
Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance
We have theoretically investigated the effects of random discrete distribution of implanted and annealed arsenic (As) atoms on device characteristics of silicon nanowire (Si NW) transistors. Kinetic Monte Carlo simulation is used for generating realistic random distribution of active As atoms in Si...
Autores principales: | Uematsu, Masashi, Itoh, Kohei M, Mil'nikov, Gennady, Minari, Hideki, Mori, Nobuya |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552816/ https://www.ncbi.nlm.nih.gov/pubmed/23259464 http://dx.doi.org/10.1186/1556-276X-7-685 |
Ejemplares similares
-
Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing
por: Yuan, Zhishan, et al.
Publicado: (2017) -
Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films
por: Kato, Shinya, et al.
Publicado: (2017) -
Conductive-probe atomic force microscopy characterization of silicon nanowire
por: Alvarez, José, et al.
Publicado: (2011) -
Thermal conductance calculations of silicon nanowires: comparison with diamond nanowires
por: Yamamoto, Kohei, et al.
Publicado: (2013) -
Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition
por: Kato, Shinya, et al.
Publicado: (2013)