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A simple and fast fabrication of a both self-cleanable and deep-UV antireflective quartz nanostructured surface

Both self-cleanability and antireflectivity were achieved on quartz surfaces by forming heptadecafluoro-1,1,2,2-tetrahydrodecyltrichlorosilane self-assembled monolayer after fabrication of nanostructures with a mask-free method. By exposing polymethylmethacrylate spin-coated quartz plates to O(2) re...

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Detalles Bibliográficos
Autores principales: Kim, Jung Suk, Jeong, Hyun Woo, Lee, Wonbae, Park, Bo Gi, Kim, Beop Min, Lee, Kyu Back
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552822/
https://www.ncbi.nlm.nih.gov/pubmed/22853428
http://dx.doi.org/10.1186/1556-276X-7-430
Descripción
Sumario:Both self-cleanability and antireflectivity were achieved on quartz surfaces by forming heptadecafluoro-1,1,2,2-tetrahydrodecyltrichlorosilane self-assembled monolayer after fabrication of nanostructures with a mask-free method. By exposing polymethylmethacrylate spin-coated quartz plates to O(2) reactive ion etching (RIE) and CF(4) RIE successively, three well-defined types of nanopillar arrays were generated: A2, A8, and A11 patterns with average pillar widths of 33 ± 4 nm, 55 ± 5 nm, and 73 ± 14 nm, respectively, were formed. All the fabrication processes including the final cleaning can be finished within 4 h. All nanostructured quartz surfaces exhibited contact angles higher than 155° with minimal water droplet adhesiveness and enhanced transparency (due to antireflectivity) over a broad spectral range from 350 to 900 nm. Furthermore, A2 pattern showed an enhanced antireflective effect that extends to the deep-UV range near 190 nm, which is a drawback region in conventional thin-film-coating approaches as a result of thermal damage. Because, by changing the conditions of successive RIE, the geometrical configurations of nanostructure arrays can be easily modified to meet specific needs, the newly developed fabrication method is expected to be applied in various optic and opto-electrical areas. PACS codes: 06.60.Ei; 81.65.Cf; 81.40.Vw.