Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed...

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Detalles Bibliográficos
Autores principales: Zhang, Hongyi, Chen, Yonghai, Zhou, Guanyu, Tang, Chenguang, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552827/
https://www.ncbi.nlm.nih.gov/pubmed/23110846
http://dx.doi.org/10.1186/1556-276X-7-600

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552827/
https://www.ncbi.nlm.nih.gov/pubmed/23110846
http://dx.doi.org/10.1186/1556-276X-7-600

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