Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed...

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Detalles Bibliográficos
Autores principales: Zhang, Hongyi, Chen, Yonghai, Zhou, Guanyu, Tang, Chenguang, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552827/
https://www.ncbi.nlm.nih.gov/pubmed/23110846
http://dx.doi.org/10.1186/1556-276X-7-600
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author Zhang, Hongyi
Chen, Yonghai
Zhou, Guanyu
Tang, Chenguang
Wang, Zhanguo
author_facet Zhang, Hongyi
Chen, Yonghai
Zhou, Guanyu
Tang, Chenguang
Wang, Zhanguo
author_sort Zhang, Hongyi
collection PubMed
description For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed an initial increase and then decrease at higher temperatures, which were unexpected from a thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD formation rate was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was given. Those results gave hints of the kinetic aspects of QD self-assembly.
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spelling pubmed-35528272013-01-28 Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots Zhang, Hongyi Chen, Yonghai Zhou, Guanyu Tang, Chenguang Wang, Zhanguo Nanoscale Res Lett Nano Express For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed an initial increase and then decrease at higher temperatures, which were unexpected from a thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD formation rate was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was given. Those results gave hints of the kinetic aspects of QD self-assembly. Springer 2012-10-30 /pmc/articles/PMC3552827/ /pubmed/23110846 http://dx.doi.org/10.1186/1556-276X-7-600 Text en Copyright ©2012 Zhang et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Zhang, Hongyi
Chen, Yonghai
Zhou, Guanyu
Tang, Chenguang
Wang, Zhanguo
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
title Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
title_full Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
title_fullStr Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
title_full_unstemmed Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
title_short Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
title_sort wetting layer evolution and its temperature dependence during self-assembly of inas/gaas quantum dots
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552827/
https://www.ncbi.nlm.nih.gov/pubmed/23110846
http://dx.doi.org/10.1186/1556-276X-7-600
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