Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional cha...

Descripción completa

Detalles Bibliográficos
Autores principales: Reyes, Daniel F, González, David, Ulloa, Jose M, Sales, David L, Dominguez, Lara, Mayoral, Alvaro, Hierro, Adrian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552833/
https://www.ncbi.nlm.nih.gov/pubmed/23181950
http://dx.doi.org/10.1186/1556-276X-7-653

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552833/
https://www.ncbi.nlm.nih.gov/pubmed/23181950
http://dx.doi.org/10.1186/1556-276X-7-653

Ejemplares similares