Cargando…
Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional cha...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552833/ https://www.ncbi.nlm.nih.gov/pubmed/23181950 http://dx.doi.org/10.1186/1556-276X-7-653 |