Sn-doped In(2)O(3) nanowires: enhancement of electrical field emission by a selective area growth

Selective area growth of single crystalline Sn-doped In(2)O(3) (ITO) nanowires synthesized via vapor–liquid–solid (VLS) method at 600°C was applied to improve the field emission behavior owing to the reduction of screen effect. The enhanced field emission performance reveals the reduction of turn-on...

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Detalles Bibliográficos
Autores principales: Chang, Wen-Chih, Kuo, Cheng-Hsiang, Juan, Chien-Chang, Lee, Pei-Jung, Chueh, Yu-Lun, Lin, Su-Jien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552838/
https://www.ncbi.nlm.nih.gov/pubmed/23259411
http://dx.doi.org/10.1186/1556-276X-7-684

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552838/
https://www.ncbi.nlm.nih.gov/pubmed/23259411
http://dx.doi.org/10.1186/1556-276X-7-684

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