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Sn-doped In(2)O(3) nanowires: enhancement of electrical field emission by a selective area growth
Selective area growth of single crystalline Sn-doped In(2)O(3) (ITO) nanowires synthesized via vapor–liquid–solid (VLS) method at 600°C was applied to improve the field emission behavior owing to the reduction of screen effect. The enhanced field emission performance reveals the reduction of turn-on...
Autores principales: | Chang, Wen-Chih, Kuo, Cheng-Hsiang, Juan, Chien-Chang, Lee, Pei-Jung, Chueh, Yu-Lun, Lin, Su-Jien |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552838/ https://www.ncbi.nlm.nih.gov/pubmed/23259411 http://dx.doi.org/10.1186/1556-276X-7-684 |
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