Direct Transformation of Amorphous Silicon Carbide into Graphene under Low Temperature and Ambient Pressure

A large-scale availability of the graphene is critical to the successful application of graphene-based electronic devices. The growth of epitaxial graphene (EG) on insulating silicon carbide (SiC) surfaces has opened a new promising route for large-scale high-quality graphene production. However, tw...

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Detalles Bibliográficos
Autores principales: Peng, Tao, Lv, Haifeng, He, Daping, Pan, Mu, Mu, Shichun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3556591/
https://www.ncbi.nlm.nih.gov/pubmed/23359349
http://dx.doi.org/10.1038/srep01148

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3556591/
https://www.ncbi.nlm.nih.gov/pubmed/23359349
http://dx.doi.org/10.1038/srep01148

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