Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

AgI nanoionics-based resistive switching memories were studied in respect to chemical stability of the Ag/AgI interface using x-ray absorption spectroscopy. The apparent dissolution of Ag films of thickness below some tens of nanometers and the loss of electrode/electrolyte contact was critically ad...

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Detalles Bibliográficos
Autores principales: Cho, Deok-Yong, Tappertzhofen, Stefan, Waser, Rainer, Valov, Ilia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3558693/
https://www.ncbi.nlm.nih.gov/pubmed/23378904
http://dx.doi.org/10.1038/srep01169

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3558693/
https://www.ncbi.nlm.nih.gov/pubmed/23378904
http://dx.doi.org/10.1038/srep01169

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