Micro-ultracapacitors with highly doped silicon nanowires electrodes

Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via chemical vapor deposition on silicon substrate. These nanostructured silicon substrates have been used as electrodes to build symmetrical micro-ultracapacitors. These devices show a quasi-ideal capacitive behavior...

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Detalles Bibliográficos
Autores principales: Thissandier, Fleur, Pauc, Nicolas, Brousse, Thierry, Gentile, Pascal, Sadki, Saïd
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3563566/
https://www.ncbi.nlm.nih.gov/pubmed/23336289
http://dx.doi.org/10.1186/1556-276X-8-38

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3563566/
https://www.ncbi.nlm.nih.gov/pubmed/23336289
http://dx.doi.org/10.1186/1556-276X-8-38

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