Micro-ultracapacitors with highly doped silicon nanowires electrodes

Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via chemical vapor deposition on silicon substrate. These nanostructured silicon substrates have been used as electrodes to build symmetrical micro-ultracapacitors. These devices show a quasi-ideal capacitive behavior...

Descripción completa

Detalles Bibliográficos
Autores principales: Thissandier, Fleur, Pauc, Nicolas, Brousse, Thierry, Gentile, Pascal, Sadki, Saïd
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3563566/
https://www.ncbi.nlm.nih.gov/pubmed/23336289
http://dx.doi.org/10.1186/1556-276X-8-38
Descripción
Sumario:Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via chemical vapor deposition on silicon substrate. These nanostructured silicon substrates have been used as electrodes to build symmetrical micro-ultracapacitors. These devices show a quasi-ideal capacitive behavior in organic electrolyte (1 M NEt(4)BF(4) in propylene carbonate). Their capacitance increases with the length of SiNWs on the electrode and has been improved up to 10 μFcm(−2) by using 20 μm SiNWs, i.e., ≈10-fold bulk silicon capacitance. This device exhibits promising galvanostatic charge/discharge cycling stability with a maximum power density of 1.4 mW cm(−2).

Ejemplares similares