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Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 t...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3564710/ https://www.ncbi.nlm.nih.gov/pubmed/23270331 http://dx.doi.org/10.1186/1556-276X-7-686 |