InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, w...

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Detalles Bibliográficos
Autores principales: Lv, Wenbin, Wang, Lai, Wang, Jiaxing, Hao, Zhibiao, Luo, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3570386/
https://www.ncbi.nlm.nih.gov/pubmed/23134721
http://dx.doi.org/10.1186/1556-276X-7-617

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3570386/
https://www.ncbi.nlm.nih.gov/pubmed/23134721
http://dx.doi.org/10.1186/1556-276X-7-617

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