Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators

In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Shuh Ying, Yoon, Soon Fatt, Ngo, Andrew CY, Guo, Tina
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3576240/
https://www.ncbi.nlm.nih.gov/pubmed/23388169
http://dx.doi.org/10.1186/1556-276X-8-59

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3576240/
https://www.ncbi.nlm.nih.gov/pubmed/23388169
http://dx.doi.org/10.1186/1556-276X-8-59

Ejemplares similares