Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiN(x) layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by...

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Detalles Bibliográficos
Autores principales: Salomon, Damien, Dussaigne, Amelie, Lafossas, Matthieu, Durand, Christophe, Bougerol, Catherine, Ferret, Pierre, Eymery, Joel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3576259/
https://www.ncbi.nlm.nih.gov/pubmed/23391377
http://dx.doi.org/10.1186/1556-276X-8-61

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3576259/
https://www.ncbi.nlm.nih.gov/pubmed/23391377
http://dx.doi.org/10.1186/1556-276X-8-61

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