Cargando…

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiN(x) layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by...

Descripción completa

Detalles Bibliográficos
Autores principales:	Salomon, Damien, Dussaigne, Amelie, Lafossas, Matthieu, Durand, Christophe, Bougerol, Catherine, Ferret, Pierre, Eymery, Joel
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2013
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3576259/ https://www.ncbi.nlm.nih.gov/pubmed/23391377 http://dx.doi.org/10.1186/1556-276X-8-61

Ejemplares similares

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
por: Liu, Fang, et al.
Publicado: (2020)

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films
por: Kochetkov, Fedor M., et al.
Publicado: (2021)

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
por: Zhong, Aihua, et al.
Publicado: (2012)

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors
por: Guan, Nan, et al.
Publicado: (2016)

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH(3) Growth Interruption
por: Kim, Sang-Jo, et al.
Publicado: (2021)

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes
por: Yu, Ye, et al.
Publicado: (2021)

Piezo-Potential Generation in Capacitive Flexible Sensors Based on GaN Horizontal Wires
por: El Kacimi, Amine, et al.
Publicado: (2018)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
por: Yu, Ing-Song, et al.
Publicado: (2014)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
por: Piprek, Joachim
Publicado: (2020)

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
por: Chen, Wen, et al.
Publicado: (2021)

Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes
por: Nee, Tzer-En, et al.
Publicado: (2021)

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
por: Li, Jianfei, et al.
Publicado: (2021)

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
por: Bolshakov, Alexey D, et al.
Publicado: (2018)

Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth
por: Yoo, Yang-Seok, et al.
Publicado: (2017)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
por: Shiu, Guo-Yi, et al.
Publicado: (2016)

Hybrid Device of Blue GaN Light-Emitting Diodes and Organic Light-Emitting Diodes with Color Tunability for Smart Lighting Sources
por: Weng, Yalian, et al.
Publicado: (2022)

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
por: Hu, Hongpo, et al.
Publicado: (2017)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
por: Fragkos, Ioannis E., et al.
Publicado: (2017)

Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes
por: Chen, Shuo-Wei, et al.
Publicado: (2017)

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)
por: Volkov, Roman, et al.
Publicado: (2021)

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy
por: Lee, Moonsang, et al.
Publicado: (2019)

Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors
por: Kim, Tae Kyoung, et al.
Publicado: (2022)

Modelling of proton irradiated GaN-based high-power white light-emitting diodes
por: Floriduz, Alessandro, et al.
Publicado: (2018)

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode
por: Sadaf, JR, et al.
Publicado: (2010)

Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes
por: Ge, Hai-Liang, et al.
Publicado: (2015)

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes
por: Hsu, Kai-Chiang, et al.
Publicado: (2015)

Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
por: Jeong, Junseok, et al.
Publicado: (2020)

Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
por: Chao, Szu-Han, et al.
Publicado: (2020)

Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit
por: Bae, Junho, et al.
Publicado: (2022)

Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC
por: Serban, Andreea Bianca, et al.
Publicado: (2021)

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
por: Lee, Moonsang, et al.
Publicado: (2018)

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
por: Tsai, Ming-Ta, et al.
Publicado: (2014)

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015)

Cannot write session to /tmp/vufind_sessions/sess_3ftieq5606su1mhde9efr4f6b3