Impact of oxidation and reduction annealing on the electrical properties of Ge/La(2)O(3)/ZrO(2) gate stacks

The paper addresses the passivation of Germanium surfaces by using layered La(2)O(3)/ZrO(2) high-k dielectrics deposited by Atomic Layer Deposition to be applied in Ge-based MOSFET devices. Improved electrical properties of these multilayered gate stacks exposed to oxidizing and reducing ambient dur...

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Detalles Bibliográficos
Autores principales: Henkel, Christoph, Hellström, Per-Erik, Östling, Mikael, Stöger-Pollach, Michael, Bethge, Ole, Bertagnolli, Emmerich
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Pergamon Press 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3587347/
https://www.ncbi.nlm.nih.gov/pubmed/23483756
http://dx.doi.org/10.1016/j.sse.2012.04.004

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3587347/
https://www.ncbi.nlm.nih.gov/pubmed/23483756
http://dx.doi.org/10.1016/j.sse.2012.04.004

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