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Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y(2)O(3) film on gallium nitride

The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N(2) + 5% H(2)), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y(2)O(3)) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was...

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Detalles Bibliográficos
Autores principales:	Quah, Hock Jin, Cheong, Kuan Yew
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2013
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3598984/ https://www.ncbi.nlm.nih.gov/pubmed/23360596 http://dx.doi.org/10.1186/1556-276X-8-53

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