In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection hi...

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Detalles Bibliográficos
Autores principales: Li, Mi-Feng, Yu, Ying, He, Ji-Fang, Wang, Li-Juan, Zhu, Yan, Shang, Xiang-jun, Ni, Hai-Qiao, Niu, Zhi-Chuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3599531/
https://www.ncbi.nlm.nih.gov/pubmed/23414094
http://dx.doi.org/10.1186/1556-276X-8-86

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3599531/
https://www.ncbi.nlm.nih.gov/pubmed/23414094
http://dx.doi.org/10.1186/1556-276X-8-86

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