Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current–voltage characteristic of...

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Detalles Bibliográficos
Autores principales: Rahmani, Meisam, Ahmadi, Mohammad Taghi, Abadi, Hediyeh Karimi Feiz, Saeidmanesh, Mehdi, Akbari, Elnaz, Ismail, Razali
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3602287/
https://www.ncbi.nlm.nih.gov/pubmed/23363692
http://dx.doi.org/10.1186/1556-276X-8-55

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3602287/
https://www.ncbi.nlm.nih.gov/pubmed/23363692
http://dx.doi.org/10.1186/1556-276X-8-55

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