Room-temperature efficient light detection by amorphous Ge quantum wells

In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO(2) layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement e...

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Detalles Bibliográficos
Autores principales: Cosentino, Salvatore, Miritello, Maria, Crupi, Isodiana, Nicotra, Giuseppe, Simone, Francesca, Spinella, Corrado, Terrasi, Antonio, Mirabella, Salvatore
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3605310/
https://www.ncbi.nlm.nih.gov/pubmed/23496870
http://dx.doi.org/10.1186/1556-276X-8-128

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3605310/
https://www.ncbi.nlm.nih.gov/pubmed/23496870
http://dx.doi.org/10.1186/1556-276X-8-128

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